Effect of antimony on growth mode and properties of thick InGaN layers-Reference-Cited by-同舟云学术

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Effect of antimony on growth mode and properties of thick InGaN layers

Published:2015-03 Issue: Volume:414 Page:42-48
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Koch Holger,Pietzonka Ines,Galler Bastian,Strassburg Martin,Kalisch Holger,Vescan Andrei,Lugauer Hans-Juergen

Funder

European Community within the FP7 project ‘NewLED’

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference22 articles.

1. Organometallic Vapor-Phase Epitaxy;Stringfellow,1999

2. Effect of surfactant Sb on In incorporation and thin film morphology of InGaN layers grown by organometallic vapor phase epitaxy;Merrell;J. Cryst. Growth,2013

3. Time-resolved photoluminescence studies of the optical quality of InGaN/GaN multi-quantum well grown by MOCVD—antimony surfactant effect;Baranowski;Semicond. Sci. Technol.,2012

4. K.G. Sadasivam, J.-I. Shim, J.K. Lee, Antimony surfactant effect on green emission InGaN/GaN multi quantum wells grown by MOCVD, J. Nanosci. Nanotechnol. 11 (2) (2011-02-01T00:00:00) 1787–1790. http://dx.doi.org/doi:10.1166/jnn.2011.3387.

5. Structural change of InGaN nanostructures grown by mixed-source hydride vapor phase epitaxy;Ok;Jpn. J. Appl. Phys.,2011

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