Growth rate for the selective epitaxial growth of III–V compounds inside submicron shallow-trench-isolation trenches on Si (001) substrates by MOVPE: Modeling and experiments-Reference-Cited by-同舟云学术

Growth rate for the selective epitaxial growth of III–V compounds inside submicron shallow-trench-isolation trenches on Si (001) substrates by MOVPE: Modeling and experiments

Published:2014-04 Issue: Volume:391 Page:59-63
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Jiang S.,Merckling C.,Guo W.,Waldron N.,Caymax M.,Vandervorst W.,Seefeldt M.,Heyns M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference22 articles.

1. A diffusion model for selective-area epitaxy by metalorganic chemical vapor deposition

2. A theory for metalorganic vapor phase epitaxial selective growth on planar patterned substrates

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4. Diffusion during metalorganic vapor-phase epitaxy on V-groove patterned substrates

5. Simulation of species transport during growth of compound semiconductors over patterned substrates

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