Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique-Reference-Cited by-同舟云学术

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Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique

Published:2014-06 Issue: Volume:395 Page:68-73
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kusunoki Kazuhiko,Okada Nobuhiro,Kamei Kazuhito,Moriguchi Koji,Daikoku Hironori,Kado Motohisa,Sakamoto Hidemitsu,Bessho Takeshi,Ujihara Toru

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference14 articles.

1. Investigation of growth processes of ingots of silicon carbide single crystals;Tairov;J. Cryst. Growth,1978

2. Ultrahigh-quality silicon carbide single crystals;Nakamura;Nature,2004

3. Growth of micropipe free crystals on 4H-SiC {03-38} seeds;Furusho;Mater. Sci. Forum,2006

4. Prospect of the use of liquid phase technique for the growth of bulk silicon carbide crystals;Hofmann;Mater. Sci. Eng. B,1999

5. High efficiency conversion of threading screw dislocations in 4H-SiC by solution growth;Yamamoto;Appl. Phys. Express,2012

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1. Effects of coil frequency on the carbon transport in the top-seeded solution growth of SiC single crystal;Journal of Crystal Growth;2024-10

2. Advances in fast 4H–SiC crystal growth and defect reduction by high-temperature gas-source method;Materials Science in Semiconductor Processing;2024-06

3. Analysis of Macrostep Interaction via Carbon Diffusion Field in SiC Solution Growth;Journal of Crystal Growth;2024-04

4. Suppression of SiC Inclusions in 4H-SiC Crystals Grown from Si–Cr–C-Based Solution Saturated with SiC;Crystal Growth & Design;2024-03-06

5. Effects of solution height and crystal rotation on the solution flow behavior in the top-seeded solution growth of SiC single crystals;CrystEngComm;2024

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