Epitaxial growth of GaN by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) in the downflow of a very high frequency (VHF) N2/H2 excited plasma – effect of TMG flow rate and VHF power-Reference-Cited by-同舟云学术

Epitaxial growth of GaN by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) in the downflow of a very high frequency (VHF) N2/H2 excited plasma – effect of TMG flow rate and VHF power

Published:2014-04 Issue: Volume:391 Page:97-103
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Lu Yi,Kondo Hiroki,Ishikawa Kenji,Oda Osamu,Takeda Keigo,Sekine Makoto,Amano Hiroshi,Hori Masaru

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference50 articles.

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