Nanoheterostructures with InSb quantum dashes inserted in the InAs unipolar matrix-Reference-Cited by-同舟云学术

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Nanoheterostructures with InSb quantum dashes inserted in the InAs unipolar matrix

Published:2015-03 Issue: Volume:414 Page:177-180
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Moiseev K.D.,Romanov V.V.,Dement׳ev P.A.,Ivanov E.V.

Funder

Russian Foundation for Basic Research, Russia

Physical Sciences Department of the Russian Academy of Sciences

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference7 articles.

1. Uniform InSb quantum dots buried in narrow-gap InAs(Sb,P) matrix

2. Characterization of InSb QDs grown on InAs (100) substrate by MBE and MOVPE

3. Specific features of the epitaxial growth of narrow-gap InSb quantum dots on an InAs substrate

4. Specific features of nanosize object formation in an InSb/InAs system by metal-organic vapor-phase epitaxy

5. Landolt-Burnstein, Handbook, Numerical Data,1982

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1. Twin InSb/GaAs quantum nano-stripes: Growth optimization and related properties;Journal of Crystal Growth;2018-04

2. Growth Control of Twin InSb/GaAs Nano-Stripes by Molecular Beam Epitaxy;MRS Advances;2017-08-10

3. Interband and intraband optical light absorption in quantum dash systems;SPIE Proceedings;2017-06-26

4. Growth of truncated pyramidal InSb nanostructures on GaAs substrate;Journal of Crystal Growth;2017-06

5. Optical “visualization” of Pythagorean triples and electrostatic multipoles in quantum dash;Physica E: Low-dimensional Systems and Nanostructures;2017-06

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