Uniform InSb quantum dots buried in narrow-gap InAs(Sb,P) matrix-Reference-Cited by-同舟云学术

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Uniform InSb quantum dots buried in narrow-gap InAs(Sb,P) matrix

Published:2013-09 Issue: Volume:543 Page:74-77
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Moiseev Konstantin,Parkhomenko Yana,Nevedomsky Vladimir

Funder

RBRF

Presidium of RAS

Department of Physics Sciences of RAS

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Mid-Infrared 2—5 μm Heterojunction Laser Diodes

2. Liquid Phase Epitaxial Growth of InAs1-x-yPxSbyon InAs Substrate

3. Characterization of InSb QDs grown on InAs (100) substrate by MBE and MOVPE

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Long-Wavelength Luminescence of InSb Quantum Dots in Type II Broken-Gap Heterostructure;Electronics;2023-01-26

2. Effects of In composition on the surface morphology of self-assembled In _x Ga_1−xSb/GaAs quantum dots;Japanese Journal of Applied Physics;2022-05-25

3. Growth Control of Twin InSb/GaAs Nano-Stripes by Molecular Beam Epitaxy;MRS Advances;2017-08-10

4. Growth of truncated pyramidal InSb nanostructures on GaAs substrate;Journal of Crystal Growth;2017-06

5. Effects of Ga deposition rate and Sb flux on morphology of GaSb quantum dots formed on GaAs;physica status solidi (c);2016-09-07

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