Multi-crystalline silicon solidification under controlled forced convection
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Impurity segregation in directional solidified multi-crystalline silicon;Bellmann;J. Cryst. Growth,2010
2. Numerical study on transport phenomena in a directional solidification process in the presence of travelling magnetic fields;Dropka;J. Cryst. Growth,2010
3. The influence of growth rate on the formation and avoidance of C and N related precipitates during directional solidification of multi crystalline silicon;Trempa;J. Cryst. Growth,2010
4. Influence of travelling magnetic fields on S–L interface shapes of materials with different electrical conductivities;Dropka;J. Cryst. Growth,2012
5. Effect of flow pattern on the segregation of impurities in vertical Bridgman growth of multi-crystalline silicon;Bellmann;J. Cryst. Growth,2013
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