Suppressing efficiency droop using graded AlGaN/InGaN superlattice electron blocking layer for InGaN-based light-emitting diodes-Reference-Cited by-同舟云学术

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Suppressing efficiency droop using graded AlGaN/InGaN superlattice electron blocking layer for InGaN-based light-emitting diodes

Published:2017-06 Issue: Volume:468 Page:562-566
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Wang C.K.,Hung K.C.,Chiou Y.Z.,Jheng J.S.,Chang S.P.,Chang S.J.

Funder

National Science Council

Ministry of Science and Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference23 articles.

1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

2. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

3. Solid-State Light Sources Getting Smart

4. High-Performance Green and Yellow LEDs Grown on ${\rm SiO}_{2}$ Nanorod Patterned GaN/Si Templates

5. Efficiency-Droop Suppression by Using Large-Bandgap AlGaInN Thin Barrier Layers in InGaN Quantum-Well Light-Emitting Diodes

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance improvement of InGaN LEDs by using strain compensated last quantum barrier and electron blocking layer;Optik;2021-12

2. Improvement of Radiative Recombination Rate and Efficiency Droop of InGaN Light Emitting Diodes with In‐Component‐Graded InGaN Barrier;physica status solidi (a);2021-09-07

3. Performance improvements of AlGaN-based deep-ultraviolet light-emitting diodes with specifically designed irregular sawtooth hole and electron blocking layers;Optics Communications;2019-06

4. Efficient Carrier Confinement in Deep-Ultraviolet Light-Emitting Diodes With Composition-Graded Configuration;IEEE Transactions on Electron Devices;2017-12

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