Performance improvements of AlGaN-based deep-ultraviolet light-emitting diodes with specifically designed irregular sawtooth hole and electron blocking layers-Reference-Cited by-同舟云学术

Performance improvements of AlGaN-based deep-ultraviolet light-emitting diodes with specifically designed irregular sawtooth hole and electron blocking layers

Published:2019-06 Issue: Volume:441 Page:149-154
ISSN:0030-4018
Container-title:Optics Communications
language:en
Short-container-title:Optics Communications

Author:

Shi Hengzhi,Gu Huaimin,Li Jihang,Yang Xianqi,Zhang Jinyuan,Yuan Rui,Chen Ximeng,Liu Nana

Funder

Natural Science Foundation of Guangdong Province

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. The improvement of deep-ultraviolet light-emitting diodes with gradually decreasing Al content in AlGaN electron blocking layers

2. Advances in group III-nitride-based deep UV light-emitting diode technology

3. Investigation of the light-extraction efficiency in 280 nm AlGaN-based light-emitting diodes having a highly transparent p-AlGaN layer

4. Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency

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3. Semi-classical physics based model in AlGaN/BGaN based ultraviolet LED with p-AlGaN layer sandwiched around electron-blocking layer for droop-free efficiency;Micro and Nanostructures;2024-04

4. Carrier Blocking Layer Analysis for High Integral Confinement Factor of AlGaN-based Deep-Ultraviolet Light-Emitting Diode;2023-12-11

5. The effect of different AlGaN insertion layer thicknesses on the photoelectric properties of InGaN/AlGaN near UV light emitting diodes;Results in Physics;2023-12