Selective area growth of Bi2Te3 and Sb2Te3 topological insulator thin films-Reference-Cited by-同舟云学术

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Selective area growth of Bi2Te3 and Sb2Te3 topological insulator thin films

Published:2016-06 Issue: Volume:443 Page:38-42
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kampmeier Jörn,Weyrich Christian,Lanius Martin,Schall Melissa,Neumann Elmar,Mussler Gregor,Schäpers Thomas,Grützmacher Detlev

Funder

DFG

Virtual Institute for Topological Insulators

Helmholtz Nanofacility

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. Thermoelectrics;Nolas,2001

2. Nanostructured Thermoelectrics: The New Paradigm?

3. MBE growth optimization of topological insulator Bi2Te3 films

4. Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States inBi2Te3andSb2Te3

5. The birth of topological insulators

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1. In-plane magnetic field driven conductance modulations in topological insulator kinks;Physical Review B;2024-04-23

2. Growth of Textured Chalcogenide Thin Films and Their Functionalization through Confinement;physica status solidi (a);2024-04-09

3. Aharonov-Bohm Interference and Phase-Coherent Surface-State Transport in Topological Insulator Rings;Nano Letters;2023-07-03

4. Low-damage electron beam lithography for nanostructures on Bi2Te3-class topological insulator thin films;Journal of Applied Physics;2023-06-23

5. Topological transport properties of highly oriented Bi₂Te₃ thin film deposited by sputtering;Journal of Physics: Condensed Matter;2023-06-01

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