In situ preparation of Si p-n junctions and subsequent surface preparation for III-V heteroepitaxy in MOCVD ambient-Reference-Cited by-同舟云学术

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In situ preparation of Si p-n junctions and subsequent surface preparation for III-V heteroepitaxy in MOCVD ambient

Published:2017-04 Issue: Volume:464 Page:14-19
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Paszuk Agnieszka,Dobrich Anja,Koppka Christian,Brückner Sebastian,Duda Marek,Kleinschmidt Peter,Supplie Oliver,Hannappel Thomas

Funder

German Federal Ministry of Education and Research

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference38 articles.

1. New efficiency frontiers with wafer-bonded multi-junction solar cells;Tibbits;Proc. Eur. Photovolt. Sol. Energy Conf. Exhib.,2014

2. Detailed balance limit of the efficiency of tandem solar cells;De Vos;J. Phys. D Appl. Phys.,1980

3. Epitaxial III-V films and surfaces for photoelectrocatalysis;Döscher;Chemphyschem,2012

4. An analysis of the optimal band gaps of light absorbers in integrated tandem photoelectrochemical water-splitting systems;Hu;Energy Environ. Sci.,2013

5. Materials for light-induced water splitting: in situ controlled surface preparation of GaPN epilayers grown lattice-matched on Si(100);Supplie;J. Appl. Phys.,2014

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Combining advanced photoelectron spectroscopy approaches to analyse deeply buried GaP(As)/Si(1 0 0) interfaces: Interfacial chemical states and complete band energy diagrams;Applied Surface Science;2022-12

2. Combining Advanced Photoelectron Spectroscopy Approaches to Analyse Deeply Buried Gap(As)/Si(100) Interfaces: Interfacial Chemical States and Complete Band Energy Diagrams;SSRN Electronic Journal;2022

3. Band bending at heterovalent interfaces: Hard X-ray photoelectron spectroscopy of GaP/Si(0 0 1) heterostructures;Applied Surface Science;2021-11

4. A Route to Obtaining Low-Defect III–V Epilayers on Si(100) Utilizing MOCVD;Crystal Growth & Design;2021-08-23

5. Growth of GaP Layers on Si Substrates in a Standard MOVPE Reactor for Multijunction Solar Cells;Coatings;2021-03-30

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