Interaction of SiC particles with moving solid–liquid interface during directional solidification of silicon
Author:
Funder
DLR/BMWi
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference41 articles.
1. SiC and Si3N4 inclusions in multicrystalline silicon ingots
2. Infrared Transmission Investigations of Rod - Like Defects in Multicrystalline Silicon
3. Modeling of incorporation of O, N, C and formation of related precipitates during directional solidification of silicon under consideration of variable processing parameters
4. About the formation and avoidance of C and N related precipitates during directional solidification of multi-crystalline silicon from contaminated feedstock
5. The influence of growth rate on the formation and avoidance of C and N related precipitates during directional solidification of multi crystalline silicon
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