Control of melt-crystal interface shape during sapphire crystal growth by heat exchanger method-Reference-Cited by-同舟云学术

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Control of melt-crystal interface shape during sapphire crystal growth by heat exchanger method

Published:2017-09 Issue: Volume:474 Page:31-36
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Wu Ming,Liu Lijun,Ma Wencheng

Funder

National Natural Science Foundation of China

Natural Science Basic Research Plan in Shaanxi Province of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. Modern trends in crystal growth and new applications of sapphire;Akselrod;J. Cryst. Growth,2012

2. Sapphire: Material, Manufacturing, Application;Dobrovinskaya,2009

3. Crystal growth of sapphire for substrates for high-brightness, light emitting diodes;Bruni;Cryst. Res. Technol.,2015

4. Latest developments of large-diameter c-axis sapphire grown by CHES method;Schwerdtfeger;J. Cryst. Growth,2014

5. Numerical computation of sapphire crystal growth using heat exchanger method;Lu;J. Cryst. Growth,2001

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling of the Control System of the Temperature Field in the Carbon-Graphite Thermal Node During the Growth of Leucosapphires;2024 Conference of Young Researchers in Electrical and Electronic Engineering (ElCon);2024-01-29

2. Effect of Template–Mediated Alumina Nanoparticle Morphology on Sapphire Wafer Production via Heat Exchange Method;Materials;2023-08-30

3. Analysis of Bulk Radiative Heat Transfer in a Crystal and in a Melt Using Numerical Simulation of the Sapphire Crystal Growth by the Stepanov Method;Technical Physics;2020-08

4. Study of influence of volumetric radiating overcooling of a melt on the form of front of crystallization by means of numerical modeling processes of heat transfer at growth of sapphire crystals from the melt;Journal of Physics: Conference Series;2019-11-01

5. Control of interface shape during high melting sesquioxide crystal growth by HEM technique;Journal of Crystal Growth;2018-02

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