Numerical analysis of thermal stress and dislocation density distributions in large size multi-crystalline silicon ingots during the seeded growth process-Reference-Cited by-同舟云学术

Numerical analysis of thermal stress and dislocation density distributions in large size multi-crystalline silicon ingots during the seeded growth process

Published:2017-06 Issue: Volume:468 Page:316-320
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Nguyen Thi Hoai Thu,Chen Jyh-Chen,Hu Chieh,Chen Chun-Hung,Huang Yen-Hao,Lin Huang-Wei,Yu Andy,Hsu Bruce

Funder

Ministry of Science and Technology of Taiwan

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference17 articles.

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2. Gas flow optimization during the cooling of multi-crystalline silicon ingot;Wang;Int. J. Heat Mass Transf.,2015

3. Optimizing seeded casting of mono-like silicon crystals through numerical simulation;Black;J. Cryst. Growth,2012

4. Seed-assisted growth of high quality multi crystalline silicon in directional solidification;Zhu;J. Cryst. Growth,2014

5. Grain control in directional solidification of photovoltaic silicon;Lan;J. Cryst. Growth,2012

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