Effect of process parameters and crystal orientation on 3D anisotropic stress during CZ and FZ growth of silicon
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
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2. Combined 3D and 2.5D modeling of the floating zone process with Comsol Multiphysics;Wünscher;J. Cryst. Growth,2014
3. Minimization of thermoelastic stresses in Czochralski grown silicon: application of the integrated system model;Bornside;J. Cryst. Growth,1991
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5. Numerical study of silicon crystal ridge growth;Barinovs;J. Cryst. Growth,2014
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3. Numerical investigation of floating zone silicon using Halbach array magnets;Journal of Crystal Growth;2020-09
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