Numerical investigation of floating zone silicon using Halbach array magnets
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Effect of process parameters and crystal orientation on 3D anisotropic stress during CZ and FZ growth of silicon;Drikis;J. Cryst. Growth,2017
2. Combined 3D and 2.5D modeling of the floating zone process with comsol multiphysics;Wünscher;J. Cryst. Growth,2014
3. Analysis of local segregation of impurities at a silicon melt–crystal interface during crystal growth in transverse magnetic field-applied Czochralski method;Kakimoto;J. Cryst. Growth,2009
4. Effects of crystal rotation rate on the melt–crystal interface of a CZ-Si crystal growth in a transverse magnetic field;Liu;J. Cryst. Growth,2008
5. Time-dependent behavior of melt flow in the industrial scale silicon Czochralski growth with a transverse magnetic field;Yokoyama;J. Cryst. Growth,2019
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1. Simulation of the Inductor Structure to Improve FZ Thermal Fields;Coatings;2023-09-07
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