Precipitation of Cu and Ni in n- and p-type Czochralski-grown silicon characterized by photoluminescence imaging-Reference-Cited by-同舟云学术

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Precipitation of Cu and Ni in n- and p-type Czochralski-grown silicon characterized by photoluminescence imaging

Published:2017-02 Issue: Volume:460 Page:98-104
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Sun Chang,Nguyen Hieu T.,Rougieux Fiacre E.,Macdonald Daniel

Funder

Australian Renewable Energy Agency (ARENA)

Australian Centre for Advanced Photovoltaics

Australian Research Council (ARC)

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference48 articles.

1. Transition metals in silicon;Weber;Appl. Phys. A,1983

2. Electrical properties and recombination activity of copper nickel cobalt in silicon;Istratov;Appl. Phys. A,1998

3. Metal Impurities in Silicon-Device Fabrication;Graff,2000

4. Impact of metal contamination in silicon solar cells;Coletti;Adv. Funct. Mater.,2011

5. Structural and electrical properties of metal silicide precipitates in silicon;Seibt;Physica Status Solidi(a),1999

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1. The Effect of Thermal Annealing on the Electrophysical Properties of Samples n-Si<Ni,Сu>;East European Journal of Physics;2023-09-04

2. Accumalations of impurity Ni atoms and their effect on the electrophysical properties of Si;E3S Web of Conferences;2023

3. Transition Metals in a Cast‐Monocrystalline Silicon Ingot Studied by Silicon Nitride Gettering;physica status solidi (RRL) – Rapid Research Letters;2019-09-18

4. Ring defects in n-type Czochralski-grown silicon: A high spatial resolution study using Fourier-transform infrared spectroscopy, micro-photoluminescence, and micro-Raman;Journal of Applied Physics;2018-12-28

5. Crystal Growth and Linear and Nonlinear Optical Properties of KIO3·Te(OH)6;Crystal Growth & Design;2017-07-17

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