Temperature and thermal stress evolutions in sapphire crystal during the cooling process by heat exchanger method-Reference-Cited by-同舟云学术

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Temperature and thermal stress evolutions in sapphire crystal during the cooling process by heat exchanger method

Published:2017-09 Issue: Volume:474 Page:37-42
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ma Wencheng,Zhao Wenhan,Wu Ming,Ding Guoqiang,Liu Lijun

Funder

National Natural Science Foundation of China

Natural Science Basic Research Plan in Shaanxi Province of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference22 articles.

1. Modern trends in crystal growth and new applications of sapphire;Akselrod;J. Cryst. Growth,2012

2. Numerical computation of sapphire crystal growth using heat exchanger method;Lu;J. Cryst. Growth,2001

3. Influence of the crucible geometry on the shape of melt-crystal interface during growth of sapphire crystal using a heat exchanger method;Chen;J. Cryst. Growth,2004

4. Simulation of heat transfer and convection during sapphire crystal growth in a modified heat exchanger method;Zhang;J. Cryst. Growth,2013

5. Numerical study of heat transfer during sapphire crystal growth by heat exchanger method;Ma;Int. J. Heat Mass Transf.,2014

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation on the dislocation, thermal and mechanical properties, and crystal growth stress of Zr:GdTaO4 scintillator;Optical Materials;2023-04

2. Effect of Internal Radiation on Heat Transfer during Ti:sapphire Crystal Growth Process by Heat Exchanger Method;International Journal of Heat and Mass Transfer;2021-05

3. Study on the thermal stress evolution in large scale KDP crystals during the crystal extraction process;RSC Advances;2019

4. Removal of Surface Residual Stress in a Sapphire Substrate by Etching;IEEE Transactions on Semiconductor Manufacturing;2018-11

5. Study on the cracking of a KDP seed crystal caused by temperature nonuniformity;CrystEngComm;2018

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