Influence of the crucible geometry on the shape of the melt–crystal interface during growth of sapphire crystal using a heat exchanger method
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Preparation and properties of hard crystalline materials for optical applications — a review
2. Recent Developments In Sapphire Growth By Heat Exchanger Method (HEM)
3. Current Status Of Sapphire Technology For Window And Dome Applications
4. Production of near-net-shaped sapphire domes using the heat exchanger method
5. Production of sapphire domes by the growth of near-net-shape single crystals
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1. Coupled Thermal Solidification Process Simulation of Sapphire Growth;Integrating Materials and Manufacturing Innovation;2023-12-14
2. Effect of Internal Radiation on Heat Transfer during Ti:sapphire Crystal Growth Process by Heat Exchanger Method;International Journal of Heat and Mass Transfer;2021-05
3. Catalytic Growth of Gallium Nitride Nanowires on Wet Chemically Etched Substrates by Chemical Vapor Deposition;ACS Omega;2019-09-04
4. Control of interface shape during high melting sesquioxide crystal growth by HEM technique;Journal of Crystal Growth;2018-02
5. Numerical study on the effect of additional resistive heating and crystal rotation on sapphire single crystals (Al2O3) grown by the Kyropoulos method;CrystEngComm;2018
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