Growth of dislocation-free GaN islands on Si(111) using a scandium nitride buffer layer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
2. Thermal stability of GaN on (111) Si substrate
3. Domain epitaxy: A unified paradigm for thin film growth
4. Growth of high quality GaN layers with AlN buffer on Si(111) substrates
5. Evolution of AlN buffer layers on silicon and effects on the properties of epitaxial GaN films
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1. Thermal expansion coefficient of ScN(111) thin films grown on Si(111) determined by X-ray diffraction;Applied Physics Letters;2024-01-29
2. Demonstration of compensated n-type scandium nitride Schottky diodes;Journal of Physics D: Applied Physics;2023-01-31
3. Analysis of phase stability, elastic, electronic, thermal, and optical properties of Sc1-xYxN via ab initio methods;Journal of Molecular Modeling;2022-12-21
4. Role of threading dislocations and point defects in the performance of GaN-based metal-semiconductor-metal ultraviolet photodetectors;Superlattices and Microstructures;2020-12
5. Phononic bandgap and phonon anomalies in HfN and HfN/ScN metal/semiconductor superlattices measured with inelastic x-ray scattering;Applied Physics Letters;2020-09-14
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