Global analysis of GaN growth using a solution technique
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Preparation of GaN Single Crystals Using a Na Flux
2. Equilibrium pressure of N2 over GaN and high pressure solution growth of GaN
3. Growth of GaN single crystals from a Na–Ga melt at 750°C and 5MPa of N2
4. Growth of 5 mm GaN Single Crystals at 750 °C from an Na−Ga Melt
5. GaN single crystal growth using high-purity Na as a flux
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1. Numerical Simulation of Temperature Field Optimization to Enhance Nitrogen Transfer in GaN Crystal Growth by the Na-Flux Method;ACS Omega;2023-06-22
2. Promotion of GaN Crystal Growth with Pre-stirring Using the Na-Flux Method;Journal of Electronic Materials;2023-05-19
3. Effect of crucible location on heat transfer in GaN crystal growth using Na flux method;Journal of Crystal Growth;2022-11
4. Atomic stick-slip behaviors and anisotropic deformations on a rough surface during GaN wafer polishing: A simulation study;Thin Solid Films;2021-08
5. Modeling of bulk GaN crystal growth from gallium-sodium solution;Journal of Crystal Growth;2020-03
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