A general method for the calculation of segregation profiles in floating zone grown silicon ingots with non-uniform initial distribution of the solute-Reference-Cited by-同舟云学术

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A general method for the calculation of segregation profiles in floating zone grown silicon ingots with non-uniform initial distribution of the solute

Published:2007-06 Issue:2 Volume:304 Page:317-323
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Freiheit Hans-Christof,Bonauer-Klepp Kurt,Baumann Robert

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. Zone Melting;Pfann,1958

2. H.F. Hadamovsky, Werkstoffe der Halbleitertechnik, VEB Deutscher Verlag für Grundstoffindustrie, Leipzig, 1985.

3. W. Zulehner, Ullmann's Encyclopedia of Industrial Chemistry A23, 1993, p. 721.

4. Electron Spin Resonance in a Silicon Semiconductor

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