Semiconductor(BaSi2)/metal(CoSi2) Schottky-barrier structures epitaxially grown on Si(111) substrates by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference25 articles.
1. A silicon/iron-disilicide light-emitting diode operating at a wavelength of 1.5 μm
2. Room Temperature 1.6 µm Electroluminescence from a Si-Based Light Emitting Diode with β-FeSi2 Active Region
3. Influence of Si growth temperature for embedding β-FeSi2 and resultant strain in β-FeSi2 on light emission from p-Si/β-FeSi2 particles/n-Si light-emitting diodes
4. Photoresponse properties of Al∕n-β-FeSi2 Schottky diodes using β-FeSi2 single crystals
5. Optical and electrical properties of semiconducting BaSi2 thin films on Si substrates grown by molecular beam epitaxy
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