Large photoresponsivity in semiconducting BaSi2 epitaxial films grown on Si(001) substrates by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Optical Absorption Edge of Ternary Semiconducting Silicide Ba1-xSrxSi2
2. Optical Absorption Properties of BaSi2Epitaxial Films Grown on a Transparent Silicon-on-Insulator Substrate Using Molecular Beam Epitaxy
3. Isostructural BaSi2, BaGe2 and SrGe2: electronic and optical properties
4. Consideration of the band-gap tunability of BaSi2 by alloying with Ca or Sr based on the electronic structure calculations
5. BaSi2and thin film alkaline earth silicides on silicon
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1. Structural and electronic properties of BaSi2(100) thin film on Si(111) substrate;Journal of Materials Science;2020-05-09
2. Minority-carrier lifetime and photoresponse properties of B-doped p-BaSi2, a potential light absorber for solar cells;Japanese Journal of Applied Physics;2017-02-15
3. p-BaSi2/n-Si heterojunction solar cells with conversion efficiency reaching 9.0%;Applied Physics Letters;2016-04-11
4. Phase stability and transition ofBaSi2-type disilicides and digermanides;Physical Review B;2015-02-17
5. Fabrication of n+ -BaSi2 /p+ -Si tunnel junction on Si(001) surface for characterization of photoresponse properties of BaSi2 epitaxial films;physica status solidi (c);2013-11-25
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