Crystal growth and below-bandgap optical absorption studies in InAs for non-linear optic applications
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Indium arsenide: a semiconductor for high speed and electro-optical devices
2. Infrared free electron laser measurement of two-photon absorption in InAs and InSb over a wide spectral range
3. Auger lifetime in InAs, InAsSb, and InAsSb‐InAlAsSb quantum wells
4. Nonlinear absorption in indium arsenide
5. Nonlinear absorption and refraction in indium arsenide
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1. Pressure Effect Study on the Electronic and Optical Properties of BxIn1 – xAs Alloys Using DFT Calculation;Physics of the Solid State;2020-10
2. A Comparison of Defects Between InAs Single Crystals Grown by LEC and VGF Methods;Journal of Electronic Materials;2020-03-28
3. Supertetrahedral Layers Based on GaAs or InAs;Journal of the American Chemical Society;2019-06-20
4. Bi-Related Below Band Gap Optical Absorption Band Produced in GaSbBi After Rapid Thermal Anneal at High Temperatures;Journal of Electronic Materials;2019-06-03
5. Communication—Potential of the π-Gate InAs HEMTs for High-Speed and Low-Power Logic Applications;ECS Journal of Solid State Science and Technology;2019
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