Influence of Fe-doping on GaN grown on sapphire substrates by MOCVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Growth and characteristics of Fe-doped GaN
2. Electrical characterization of GaN p-n junctions with and without threading dislocations
3. On the origin of free carriers in high-conducting n-GaN
4. Pressure Induced Deep Gap State of Oxygen in GaN
5. Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition
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