InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. Ultimate parameters of Hg1–Cd Te and InAs1–Sb n+–p photodiodes
2. Long‐wavelength InAsSb photoconductors operated at near room temperatures (200–300 K)
3. Proposal for III‐V ordered alloys with infrared band gaps
4. Atomic structure and ordering in semiconductor alloys
5. Long‐range order in InAsSb
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1. InAsSb-based photodetectors;Mid-infrared Optoelectronics;2020
2. Investigation on the InAs1–xSbxepilayers growth on GaAs (001) substrate by molecular beam epitaxy;Journal of Semiconductors;2018-03
3. Structural, optical and electrical characterization of InAs0.83Sb0.17 p-π-n photodetector grown on GaAs substrate;Thin Solid Films;2016-10
4. Detailed balance evaluation of tandem thermophotovoltaic devices residing on 6.1Å Sb-based alloys;Solar Energy Materials and Solar Cells;2015-10
5. LPE growth and characterization of InAs1−xNx films;Journal of Crystal Growth;2014-07
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