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Effect of V/III ratio on the surface morphologies of N-polar GaN films grown on offcut sapphire substrates

  • Published:2020-04 Issue: Volume:536 Page:125599
  • ISSN:0022-0248
  • Container-title:Journal of Crystal Growth
  • language:en
  • Short-container-title:Journal of Crystal Growth

Author:

Li Chengguo,Zhang Kang,Zeng Qiaoyu,Wang Qiao,Li Zilan,Zhao Wei,Chen Zhitao

Funder

National Natural Science Foundation of China

Guangzhou Municipal Science and Technology Bureau

Guangdong Academy of Sciences

Science and Technology Program of Guangdong

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. N-polar GaN epitaxy and high electron mobility transistors;Wong;Semicond. Sci. Technol.,2013

2. N-polar GaN HEMTs exhibiting record breakdown voltage over 2000 V and low dynamic on-resistance;Koksaldi;IEEE Electron Dev. Lett.,2000

3. Demonstration of constant 8 W/mm power density at 10, 30, and 94 GHz in state-of-the-art millimeter-wave N-polar GaN MISHEMTs;Romanczyk;IEEE Trans. Electron Dev.,2018

4. Growth mode and surface morphology of a GaN film deposited along the N-face polar direction on c-plane sapphire substrate;Sumiya;J. Appl. Phys.,2000

5. Structural and strain anisotropies of N-polar GaN epilayers on offcut sapphire substrates;Li;J. Vacuum Sci. Technol. A,2016

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