Chemical vapor transport synthesis, characterization and compositional tuning of ZrSxSe2−x for optoelectronic applications-Reference-Cited by-同舟云学术

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Chemical vapor transport synthesis, characterization and compositional tuning of ZrSxSe2−x for optoelectronic applications

Published:2020-07 Issue: Volume:542 Page:125609
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Fox Joshua J.,Bachu Saiphaneendra,Cavalero Randal L.,Lavelle Robert M.,Oliver Sean M.,Yee Sam,Vora Patrick M.,Alem Nasim,Snyder David W.

Funder

National Science Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference26 articles.

1. Phonons and free carriers in group IVB transition-metal dichalcogenides;Vaterlaus;J. Phys. C: Solid State Phys.,1985

2. Preparation and optical properties of group IV–VI2 chalcogenides having the CdI2 structure;Greenaway;J. Phys. Chem. Solids,1965

3. On the optical properties of some layer compounds;Lee;J. Phys. Chem. Solids,1969

4. Electrical anisotropy of layered compound ZrSe2 and HfSe2;Zheng;J. Phys. Soc. Jpn.,1989

5. Electrical properties of zirconium diselenide single crystals grown by iodine transport method;Patel;Bull. Mater. Sci.,1998

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3. Large-area epitaxial growth of 2D ZrS2(1−x)Se2x semiconductor alloys with fully tunable compositions and bandgaps for optoelectronics;Science China Materials;2023-01-17

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