Large-area epitaxial growth of 2D ZrS2(1−x)Se2x semiconductor alloys with fully tunable compositions and bandgaps for optoelectronics-Reference-Cited by-同舟云学术

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Large-area epitaxial growth of 2D ZrS2(1−x)Se2x semiconductor alloys with fully tunable compositions and bandgaps for optoelectronics

Published:2023-01-17 Issue:5 Volume:66 Page:1870-1878
ISSN:2095-8226
Container-title:Science China Materials
language:en
Short-container-title:Sci. China Mater.

Author:

Huang Jidong,Tian Yan,Cheng Yong,Li Xingxing,Zhang Siyu,Jiang Ji,Chen Jingren,Wang Gaokai,Li Jingzhen,Yin Zhigang,Zhang Xingwang

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science

Link

https://link.springer.com/content/pdf/10.1007/s40843-022-2297-1.pdf

Reference47 articles.

1. Li H, Li Y, Aljarb A, et al. Epitaxial growth of two-dimensional layered transition-metal dichalcogenides: Growth mechanism, controllability, and scalability. Chem Rev, 2018, 118: 6134–6150

2. Wang X, Song Z, Wen W, et al. Potential 2D materials with phase transitions: Structure, synthesis, and device applications. Adv Mater, 2019, 31: 1804682

3. Zhou J, Lin J, Huang X, et al. A library of atomically thin metal chalcogenides. Nature, 2018, 556: 355–359

4. Wu M, Xiao Y, Zeng Y, et al. Synthesis of two-dimensional transition metal dichalcogenides for electronics and optoelectronics. InfoMat, 2021, 3: 362–396

5. Lin YC, Torsi R, Geohegan DB, et al. Controllable thin-film approaches for doping and alloying transition metal dichalcogenides monolayers. Adv Sci, 2021, 8: 2004249

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Pressure-induced photo responsiveness enhancement and positive–negative switch in ZrSe2;Applied Physics Letters;2024-08-26

2. 2D Free‐Standing GeS_1−xSe_x with Composition‐Tunable Bandgap for Tailored Polarimetric Optoelectronics;Advanced Materials;2024-05-03

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