Vertical alignment of InN- and GaN-based nanopillar crystals grown on a multicrystalline Si substrate
Author:
Funder
JSPS
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference28 articles.
1. Band Gap of Hexagonal InN and InGaN Alloys
2. Unusual properties of the fundamental band gap of InN
3. Optical bandgap energy of wurtzite InN
4. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN
5. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
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1. Characterization of GaN‐Based Nanopillar Light‐Emitting Diodes on Multicrystalline Si Substrates: Insights into Emitting‐Color Distribution Characteristics;physica status solidi (b);2024-04-05
2. Growth and characterization of Mg-doped GaN and InGaN nanopillar-crystals based on steering-crystal-formed multi-crystalline Si substrates;Japanese Journal of Applied Physics;2023-12-15
3. Study on the Performance Impact of Introducing an InN Buffer Layer at Various Deposition Temperatures on InN Film Grown by ECR-PEMOCVD on Free-Standing Diamond Substrate;Coatings;2022-01-26
4. Growth and characterization of InN nanopillar-crystals on steering-crystal-formed multi-crystalline Si substrates;Journal of Crystal Growth;2021-11
5. GaN-nanopillar-based light-emitting diodes directly grown on multi-crystalline Si substrates;AIP Advances;2021-07-01
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