Origin of microstructural defects in single-crystalline films van der Waals epitaxy on graphene-Reference-Cited by-同舟云学术

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Origin of microstructural defects in single-crystalline films van der Waals epitaxy on graphene

Published:2020-04 Issue: Volume:536 Page:125588
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Liu Yi,Xu Yu,Cao Bing,Li Zongyao,Zhao En,Yang Song,Wang Chinhua,Wang Jianfeng,Xu Ke

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

PAPD

Suzhou Institute of Nano-Tech and Nano-Bionics

Chinese Academy of Sciences

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference28 articles.

1. Extremely efficient flexible organic light-emitting diodes with modified graphene anode;Han;Nat. Photonics,2012

2. Flexible inorganic nanostructure light-emitting diodes fabricated on graphene films;Lee;Adv. Mater.,2011

3. Transferable GaN layers grown on ZnO-coated graphene layers for optoelectronic devices;Chung;Science,2010

4. Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene;Kim;Nat. Commun.,2014

5. Radio-frequency plasma-excited molecular beam epitaxy growth of GaN on graphene/Si(100) substrates;Araki;Appl. Phys. Express.,2014

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modulation of Remote Epitaxial Heterointerface by Graphene-Assisted Attenuative Charge Transfer;ACS Nano;2023-02-06

2. Epitaxy of III-nitrides on two-dimensional materials and its applications;Chinese Physics B;2022-11-01

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