Growth of germanium monosulfide (GeS) single crystal by vapor transport from molten GeS source using a two-zone horizontal furnace
Author:
Funder
Ministry of Education, Culture, Sports, Science and Technology, Japan
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
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2. Electrical and optical properties of GeS;Yabumoto;J. Phys. Soc. Jpn.,1958
3. Growth of germanium monosulfide single crystals by sublimation;Schönherr;J. Cryst. Growth,1975
4. Electric field effect in atomically thin carbon films;Novoselov;Science,2004
5. Germanium monosulfide monolayer: a novel two-dimensional semiconductor with a high carrier mobility;Li;J. Mater. Chem. C,2016
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1. Optical transmittance range of High-Temperature stable phase germanium dichalcogenide (GeS2) single crystal grown by the Bridgman method;Journal of Crystal Growth;2024-12
2. Tailoring electrophotonic capabilities of atomically thin GeS through controlled organometallic intercalation;Journal of Applied Physics;2024-08-22
3. Effect of Ge inclusion on surface morphologies and the growth mechanism of Cu2(Sn1-xGex)S3 films grown by the sulfurization of Ge/Cu/SnS precursors;Thin Solid Films;2024-07
4. Optical Transmittance Range of High-Temperature Stable Phase Germanium Dichalcogenide (Ges2) Single Crystal Grown by the Bridgman Method;2024
5. Electronic transport properties of GeS single crystals grown by vapor transport from molten GeS source;Journal of Crystal Growth;2023-05
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