Electronic transport properties of GeS single crystals grown by vapor transport from molten GeS source-Reference-Cited by-同舟云学术

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Electronic transport properties of GeS single crystals grown by vapor transport from molten GeS source

Published:2023-05 Issue: Volume:609 Page:127153
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Nakamura Masaru^ORCID,Víllora Encarnación G.,Ohsawa Takeo^ORCID,Shimamura Kiyoshi,Ohashi Naoki

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference22 articles.

1. Electric Field Effect in Atomically Thin Carbon Films;Novoselov;Science,2004

2. A roadmap for graphene;Novoselov;Nature,2012

3. Functionalization of Graphene: Covalent and Non-Covalent Approaches, Derivatives and Applications;Georgakilas;Chem. Rev.,2012

4. Graphene-Like Two-Dimensional Materials;Xu;Chem. Rev.,2013

5. Black phosphorus field-effect transistors;Li;Nat. Nanotechnol.,2014

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1. Tailoring electrophotonic capabilities of atomically thin GeS through controlled organometallic intercalation;Journal of Applied Physics;2024-08-22

2. On the physical meaning of the geometric factor and the effective thickness in the Montgomery method;AIP Advances;2024-02-01

3. Ti3C2T MXene in-situ transformed Li2TiO3 interface layer enabling 4.5 V-LiCoO2/sulfide all-solid-state lithium batteries with superior rate capability and cyclability;Chinese Chemical Letters;2023-07

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