Growth of epitaxially stabilized, non-cubic Gd2O3 on silicon(1 1 1) substrates
Author:
Funder
Minna-James-Heineman foundation
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
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1. Epitaxial growth of Nd2O3 layers on virtual SiGe substrates on Si(111);Journal of Applied Physics;2024-03-19
2. Radio frequency power controlled Gd2O3 crystal phase transition from monoclinic to cubic;Thin Solid Films;2022-01
3. Interfacial layer formation during the growth of Gd2O3 on Si(001) and its thermal stability;Semiconductor Science and Technology;2021-10-19
4. Tuning of structural and dielectric properties of Gd2O3 grown on Si(001);Journal of Applied Physics;2020-08-07
5. Influence of nanostructure formation on the crystal structure and morphology of epitaxially grown Gd2O3 on Si(001);Acta Crystallographica Section B Structural Science, Crystal Engineering and Materials;2019-01-23
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