Light emission enhancement from Ge quantum dots with phosphorous δ-doped neighboring confinement structures-Reference-Cited by-同舟云学术

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Light emission enhancement from Ge quantum dots with phosphorous δ-doped neighboring confinement structures

Published:2017-11 Issue: Volume:477 Page:131-134
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Sawano K.,Nakama T.,Mizutani K.,Harada N.,Xu X.,Maruizumi T.

Funder

MEXT-Supported Program for the Strategic Research Foundation at Private Universities

MEXT

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. Photoluminescence and electroluminescence of SiGe dots fabricated by island growth

2. Island formation during growth of Ge on Si(100): A study using photoluminescence spectroscopy

3. Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si self-assembled quantum dots

4. Strong resonant luminescence from Ge quantum dots in photonic crystal microcavity at room temperature

5. Silicon-based light emitters fabricated by embedding Ge self-assembled quantum dots in microdisks

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Room-temperature 1550-nm lasing from tensile strain N-doped Ge quantum dots on Si;Journal of Modern Optics;2020-07-11

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