Growth rate dependence of boron incorporation into BxGa1−xAs layers
Author:
Funder
Austrian Science Fund
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
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2. Interaction between boron and intrinsic defects in GaAs;Elliott;J. Appl. Phys.,1984
3. Surface segregation of boron in BxGa1-xAs/GaAs epilayers studied by X-ray photoelecron spectroscopy and atomic force microscopy;Dumont;Appl. Phys. Lett.,2003
4. Optimized growth of BGaAs by molecular beam epitaxy;Groenert;J. Crystal Growth,2004
5. Growth of BGaAs by molecular-beam epitaxy and the effects of a bismuth surfactant;Ptak;J. Crystal Growth,2012
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