Some aspects to the understanding of the droplet epitaxial nano-hole formation-Reference-Cited by-同舟云学术

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Some aspects to the understanding of the droplet epitaxial nano-hole formation

Published:2017-11 Issue: Volume:477 Page:2-6
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Nemcsics Ákos

Funder

Concert-Japan ERA-NET FemtoTera

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference60 articles.

1. Carrier dynamics in type-II GaSb/GaAs quantum dots

2. Analysis of defect-free GaSb/GaAs(001) quantum dots grown on the Sb-terminated (2 × 8) surface

3. Self-Assembled Growth of GaSb Type II Quantum Ring Structures

4. New MBE growth method for InSb quantum well boxes

5. Growth of GaAs Epitaxial Microcrystals on an S-Terminated GaAs Substrate by Successive Irradiation of Ga and As Molecular Beams

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Brief Overview of GaAs-based Quantum Structures and Their Technologies and Applications;2022 IEEE 5th International Conference and Workshop Óbuda on Electrical and Power Engineering (CANDO-EPE);2022-11-21

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