The growth of high electron mobility InAsSb for application to high electron-mobility transistors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. An ultra-low power InAs/AlSb HEMT Ka-band low-noise amplifier
2. Sb-based HEMTs with InAlSb∕InAs heterojunction
3. Materials growth for InAs high electron mobility transistors and circuits
4. Growth of InAsSb-channel high electron mobility transistor structures
5. High mobility metamorphic AlSb/InAs heterostructures grown on InP substrates
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Antimonidation of ultrathin epitaxial aluminum nanofilms for metamorphic growth of Sb-based structures on GaAs substrates;Japanese Journal of Applied Physics;2020-02-28
2. The Study on Fabrication and Characterization of Al0.2In0.8Sb/InAs0.4Sb0.6 Heterostructures by Molecular Beam Epitaxy;IEEE Access;2019
3. Growth and optimization of InxGayAl1−x−ySb buffer layers for electronic and optoelectronic applications;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-09
4. Threading dislocation degradation of InSb to InAsSb subchannel double heterostructures;Electronic Materials Letters;2015-07
5. Damage buildup and annealing characteristics in Be-implanted InAs0.93Sb0.07 film;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-08
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