Formation of edge misfit dislocations in GexSi1−x (x∼0.4–0.5) films grown on misoriented (001)→(111) Si substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
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3. Experimental observation of nucleation of misfit dislocations induced by the stress field of primary dislocations;Thin Solid Films;2019-11
4. Зарождение комплементарных дислокаций несоответствия, индуцированное фронтом первичных 60 дислокаций, в тонкопленочных гетероструктурах / Болховитянов Ю.Б., Гутаковский А.К., Дерябин А.С, Соколов Л.В.;Тезисы докладов XIV РОССИЙСКОЙ КОНФЕРЕНЦИИ ПО ФИЗИКЕ ПОЛУПРОВОДНИКОВ «ПОЛУПРОВОДНИКИ-2019»;2019-08-20
5. Strain relaxation in epitaxial Ge crystals grown on patterned Si(001) substrates;Scripta Materialia;2017-01
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