Dislocation reduction in GaN with double MgxNy/AlN buffer layer by metal organic chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
2. Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours
3. InGaN-Based Blue Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates
4. Pendeoepitaxy of gallium nitride thin films
5. A new method of reducing dislocation density in GaN layer grown on sapphire substrate by MOVPE
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1. Comparative study of AlGaN/GaN heterostructures grown on different sapphire substrates;Superlattices and Microstructures;2019-10
2. Analyzing the AlGaN/AlN/GaN Heterostructures for HEMT Applications;Journal of Nanoelectronics and Optoelectronics;2018-03-01
3. Reduction of Threading Dislocation Density in InN Film Grown with in situ Surface Modification by Radio-frequency Plasma-excited Molecular Beam Epitaxy;MRS Advances;2018-02-20
4. Influence of initial growth conditions and Mg-surfactant on the quality of GaN film grown by MOVPE;Journal of Semiconductors;2015-02
5. Spatial Correlation Between Efficiency and Crystal Structure in GaN-Based Light-Emitting Diodes Prepared on High-Aspect Ratio Patterned Sapphire Substrate With Sputtered AlN Nucleation Layer;IEEE Transactions on Electron Devices;2014-07
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