Selective-area growth of GaAs and InAs nanowires—homo- and heteroepitaxy using templates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. GaAs free‐standing quantum‐size wires
2. Growth of one-dimensional nanostructures in MOVPE
3. MOVPE growth and real structure of vertical-aligned GaAs nanowires
4. InGaAs nano-pillar array formation on partially masked InP(111)B by selective area metal–organic vapour phase epitaxial growth for two-dimensional photonic crystal application
5. Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates
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1. Importance of As and Ga Balance in Achieving Long GaAs Nanowires by Selective Area Epitaxy;Crystal Growth & Design;2023-05-22
2. New growth mechanism of InAs nanowires array in selective-area growth by MOCVD;Vacuum;2023-02
3. Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned GaAs(111)A;Journal of Applied Physics;2022-11-14
4. Selective area epitaxy of high quality Wurtzite-InAs heterostructure on InGaAs nanopillars at indium-rich region using MOCVD;Materials Science in Semiconductor Processing;2021-11
5. Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays;Crystal Growth & Design;2021-07-27
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