Study of AlGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs substrates subjected to different treatments-Reference-Cited by-同舟云学术

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Study of AlGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs substrates subjected to different treatments

Published:2009-03 Issue:7 Volume:311 Page:1666-1670
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Contreras-Guerrero R.,Guillen-Cervantes A.,Rivera-Alvarez Z.,Pulzara-Mora A.,Gallardo-Hernandez S.,Kudriatsev Y.,Sanchez-Resendiz V.M.,Rojas-Ramirez J.S.,Cruz-Hernandez E.,Méndez-García V.H.,Zamora-Peredo L.,Lopez-Lopez M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference7 articles.

1. Complex quantum dot arrays formed by combination of self-organized anisotropic strain engineering and step engineering on shallow patterned substrates

2. Study of the GaAs MBE growth on (631)-oriented substrates by Raman spectroscopy

3. Low-Temperature Cleaning of GaAs Substrate by Atomic Hydrogen Irradiation

4. Large scale surface structure formed during GaAs (001) homoepitaxy

5. Interaction of atomic hydrogen with GaAs (001) surface oxide: volatile Ga-oxide formation

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of annealing condition and multicycle AlGaAs/GaAs structures on the Al 0.26 Ga 0.74 As surface morphology;Applied Surface Science;2015-08

2. Oxidation states of GaAs surface and their effects on neutral beam etching during nanopillar fabrication;Journal of Physics D: Applied Physics;2014-05-07

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