Optimization of AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam epitaxy for laser applications in 2.1–2.4μm range
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. InGaAs/InGaAsp/InP strained-layer quantum well lasers at ~2 μm
2. 2.12 μm InGaAs–InGaAlAs–InP diode lasers grown in solid-source molecular-beam epitaxy
3. Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3μm
4. Surfactant-mediated growth of InGaAs multiple-quantum-well lasers emitting at 2.1μm by metalorganic vapor phase epitaxy
5. 2.33-$\mu$m-Wavelength Distributed Feedback Lasers With InAs–In$_{0.53}$Ga$_{0.47}$As Multiple-Quantum Wells on InP Substrates
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1. Effect of Ridge Width on the Lasing Characteristics of Triangular and Rectangular InAs/In0.53Ga0.47As Quantum Well Lasers;Frontiers in Materials;2022-01-26
2. First-principle investigation of monoclinic (Al x In y Ga1−x−y )2O3 quaternary alloys;Semiconductor Science and Technology;2020-01-17
3. Anomalous arsenic diffusion at InGaAs/InP interface;Materials Research Express;2018-12-19
4. InP-based antimony-free lasers and photodetectors in 2 similar to 3 mu m band;J INFRARED MILLIM W;2016
5. Effect of bismuth surfactant on InP-based highly strained InAs/InGaAs triangular quantum wells;Applied Physics Letters;2015-11-23
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