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Influence of growth parameters on the sub-bandgap absorption of MOVPE-grown GaN measured using photothermal deflection spectroscopy

  • Published:2008-11 Issue:23 Volume:310 Page:4747-4750
  • ISSN:0022-0248
  • Container-title:Journal of Crystal Growth
  • language:en
  • Short-container-title:Journal of Crystal Growth

Author:

Lobo Neysha,Kadir Abdul,Laskar Masihhur R.,Shah A.P.,Gokhale M.R.,Rahman A.A.,Arora B.M.,Narasimhan K.L.,Bhattacharya Arnab

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dimension Dependent Optical Behavior of GaN Across 0D, 1D, 2D and 3D Structures;2023 6th International Conference on Electrical Information and Communication Technology (EICT);2023-12-07

2. Low Threshold GaN-Based Microdisk Lasers on Silicon With High Q Factor;Journal of Lightwave Technology;2022-05-01

3. Photothermal and optoacoustic spectroscopy: state of the art and prospects;Physics-Uspekhi;2022-05-01

4. 硅基GaN微腔制作及其激射特性（特邀）;ACTA PHOTONICA SINICA;2022

5. Improvement in structural and electrical characteristics of nonpolar a-plane Si-doped n-AlGaN;Journal of Materials Science;2020-06-11
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