Droplet epitaxy of GaAs quantum dots on (001), vicinal (001), (110), and (311)A GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Quantum Dot Heterostructures;Bimberg,1999
2. Self‐organized growth of regular nanometer‐scale InAs dots on GaAs
3. Nature of strained InAs three‐dimensional island formation and distribution on GaAs(100)
4. Molecular-beam epitaxy growth of quantum dots from strained coherent uniform islands of InGaAs on GaAs
5. Structural and optical properties of self-assembled InGaAs quantum dots
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1. Connecting Composition-Driven Faceting with Facet-Driven Composition Modulation in GaAs–AlGaAs Core–Shell Nanowires;Nano Letters;2018-07-11
2. Droplet Epitaxy for III-V Compound Semiconductor Quantum Nanostructures on Lattice Matched Systems;Journal of the Korean Physical Society;2018-07
3. Ga-migration on a Ga-rich and As-stabilized surfaces: Ga-droplet and GaAs- nanostructure formation;Materials Science in Semiconductor Processing;2017-01
4. Formation of self-assembled Ga-rich droplet chains on GaAs (100) patterned by focused ion beam;Applied Physics Letters;2016-09-19
5. Monte Carlo simulation of the formation of AIIIBV nanostructures with the use of droplet epitaxy;Optoelectronics, Instrumentation and Data Processing;2016-09
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