Monte Carlo simulation of the formation of AIIIBV nanostructures with the use of droplet epitaxy
Author:
Publisher
Allerton Press
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Instrumentation
Link
http://link.springer.com/content/pdf/10.3103/S8756699016050137.pdf
Reference43 articles.
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2. J. Wu, Zh. M. Wang, V. G. Dorogan, et al. “Strain-Free Ring-Shaped Nanostructures by Droplet Epitaxy for Photovoltaic Application,” Appl. Phys. Lett. 101, 043904 (2012).
3. J. Wu, Zh. Li, D. Shao, et al., “Multicolor Photodetector Based on GaAs Quantum Rings Grown by Droplet Epitaxy,” Appl. Phys. Lett. 94, 171102 (2009).
4. A. Scaccabarozzi, S. Adorno, S. Bietti, et al., “Evidence of Two-Photon Absorption in Strain-Free Quantum dot GaAs/AlGaAs Solar Sells,” Phys. Status Solidi. RRL. 7 (3), 173–176 (2013).
5. T. Mano, T. Kuroda, K. Mitsuishi, et al., “GaAs/AlGaAs Quantum dot Laser Fabricated on GaAs (311)A Substrate by Droplet Epitaxy,” Appl. Phys. Lett. 93, 203110 (2008).
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