Optimization of the highly strained InGaAs/GaAs quantum well lasers grown by MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. IEEE standard 802.3ae, 2002.
2. (In)GaAsN-based type-II “W” quantum-well lasers for emission at λ=1.55 μm
3. 1.3 μm room-temperature GaAs-based quantum-dot laser
4. Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well
5. Low-threshold current, high-efficiency 1.3-μm wavelength aluminum-free InGaAsN-based quantum-well lasers
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1. Effect of InAs insertion layer on the structural and optical property improvement of InGaAs/InAlAs multiple quantum wells;Journal of Alloys and Compounds;2024-05
2. High-power and low-threshold 1200 nm InGaAs/GaAs quantum-wells VECSEL grown by MOCVD;Journal of Luminescence;2023-11
3. Enhanced Radiative Efficiency of InGaAs/GaAsP Multiple Quantum Wells by Optimizing the Thickness of Interlayers;physica status solidi (a);2022-01-18
4. Effect of variable temperature growth on the crystal quality and surface morphology characteristics of InGaAs/GaAs MQWs obtained via MOCVD;Twelfth International Conference on Information Optics and Photonics;2021-11-01
5. Column III;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30
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