Hot-wire chemical vapor growth and characterization of crystalline GeTe films
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
1. Reversible switching in phase-change materials
2. A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput
3. Local structure of crystallized GeTe films
4. Memory switching of germanium tellurium amorphous semiconductor
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1. [Ge(TenBu)4] – a single source precursor for the chemical vapour deposition of germanium telluride thin films;Dalton Transactions;2019
2. The correlation of electrical conductivity with the microstructure of Ge2Sb2Te5thin films alloyed with Sn;Materials Research Express;2017-01-30
3. Alx(Sn2Se3)1−x phase change films for high-temperature data retention and fast transition speed application;Journal of Materials Science: Materials in Electronics;2015-07-09
4. Doped zinc oxide films grown by hot-wire chemical vapour deposition;Thin Solid Films;2015-02
5. On the possibility to grow zinc oxide-based transparent conducting oxide films by hot-wire chemical vapor deposition;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2014-03
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