In situ X-ray diffraction during stacking of InAs/GaAs(001) quantum dot layers and photoluminescence spectroscopy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
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1. AlGaInAs capping layer impact on emission and structure of AlGaAs/GaAs quantum wells with InAs quantum dots;Materials Science in Semiconductor Processing;2019-02
2. Emission and HR-XRD study of MBE structures with InAs quantum dots and AlGaInAs strain reducing layers;Superlattices and Microstructures;2018-12
3. In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors;Japanese Journal of Applied Physics;2018-04-16
4. Emission and HR-XRD study of InGaAs/GaAs quantum wells with InAs quantum dots grown at different temperatures;Journal of Materials Science: Materials in Electronics;2017-08-21
5. Emission and elastic strain study in GaAs/In0.15Ga0.85As/InxGa1−xAs/GaAs quantum wells with embedded InAs quantum dots;Journal of Materials Science: Materials in Electronics;2017-03-11
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